APTMC60TL11CT3AG Microchip Technology

Description: MOSFET 4N-CH 1200V 28A SP3, Supplier Device Package: SP3, Vgs(th) (Max) @ Id: 2.2V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 49nC @ 20V, Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V, Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Power - Max: 125W, Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 4 N-Channel (Three Level Inverter), Mounting Type: Chassis Mount, Package / Case: SP3, Packaging: Bulk.