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APTMC60TLM55CT3AG MICROCHIP TECHNOLOGY


125301-aptmc60tlm55ct3ag-rev3-datasheet Hersteller: MICROCHIP TECHNOLOGY
APTMC60TLM55CT3AG Transistor modules MOSFET
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Technische Details APTMC60TLM55CT3AG MICROCHIP TECHNOLOGY

Description: SIC 4N-CH 1200V 48A SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Three Level Inverter), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 250W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V, Rds On (Max) @ Id, Vgs: 49mOhm @ 40A, 20V, Gate Charge (Qg) (Max) @ Vgs: 98nC @ 20V, Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ), Supplier Device Package: SP3.

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APTMC60TLM55CT3AG Hersteller : Microchip Technology 125301-aptmc60tlm55ct3ag-rev3-datasheet Description: SIC 4N-CH 1200V 48A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Three Level Inverter)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 250W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V
Rds On (Max) @ Id, Vgs: 49mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 20V
Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ)
Supplier Device Package: SP3
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APTMC60TLM55CT3AG Hersteller : Microsemi 125301-aptmc60tlm55ct3ag-rev1-pdf Discrete Semiconductor Modules Power Module - SiC
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