AS1M080120P ANBON SEMICONDUCTOR (INT'L) LIMITED
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL SILICON CARBIDE POWER
Input Capacitance (Ciss) (Max) @ Vds: 1475 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 5mA
Power Dissipation (Max): 192W (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Technische Details AS1M080120P ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL SILICON CARBIDE POWER, Input Capacitance (Ciss) (Max) @ Vds: 1475 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +25V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 4V @ 5mA, Power Dissipation (Max): 192W (Tc), Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.