AS2302

AS2302 ANBON SEMICONDUCTOR (INT'L) LIMITED


AS2302.pdf Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.81 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
auf Bestellung 9000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
6000+0.05 EUR
9000+0.05 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details AS2302 ANBON SEMICONDUCTOR (INT'L) LIMITED

Description: N-CHANNEL ENHANCEMENT MODE MOSFE, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.81 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V.

Weitere Produktangebote AS2302 nach Preis ab 0.07 EUR bis 0.28 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AS2302 AS2302 Hersteller : ANBON SEMICONDUCTOR (INT'L) LIMITED AS2302.pdf Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.81 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
auf Bestellung 4074 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
104+0.17 EUR
168+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
AS2302 Hersteller : AnBon AS2302.pdf Transistor N-Channel MOSFET; 20V; 10V; 60mOhm; 3,5A; 1W; -55°C~150°C; AS2302 TSI2302 ANB
Anzahl je Verpackung: 500 Stücke
auf Bestellung 9000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
500+0.07 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH