AS2302

AS2302 ANBON SEMICONDUCTOR (INT'L) LIMITED


AS2302.pdf Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.81 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
auf Bestellung 21000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.053 EUR
6000+ 0.05 EUR
9000+ 0.042 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details AS2302 ANBON SEMICONDUCTOR (INT'L) LIMITED

Description: N-CHANNEL ENHANCEMENT MODE MOSFE, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.81 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V.

Weitere Produktangebote AS2302 nach Preis ab 0.064 EUR bis 0.32 EUR

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Preis ohne MwSt
AS2302 AS2302 Hersteller : ANBON SEMICONDUCTOR (INT'L) LIMITED AS2302.pdf Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.81 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
auf Bestellung 3833 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
56+0.32 EUR
82+ 0.22 EUR
152+ 0.12 EUR
500+ 0.091 EUR
1000+ 0.064 EUR
Mindestbestellmenge: 56
AS2302 Hersteller : AnBon AS2302.pdf Transistor N-Channel MOSFET; 20V; 10V; 60mOhm; 3,5A; 1W; -55°C~150°C; AS2302 TSI2302 ANB
Anzahl je Verpackung: 500 Stücke
auf Bestellung 9000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
500+0.077 EUR
Mindestbestellmenge: 500