AS2324 ANBON SEMICONDUCTOR (INT'L) LIMITED
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.09 EUR |
| 6000+ | 0.083 EUR |
| 9000+ | 0.069 EUR |
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Technische Details AS2324 ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.2W (Ta), Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote AS2324 nach Preis ab 0.1 EUR bis 0.55 EUR
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AS2324 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: N-CHANNEL ENHANCEMENT MODE MOSFE Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 5029 Stücke: Lieferzeit 10-14 Tag (e) |
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| AS2324 |
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Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 5029 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 39+ | 0.55 EUR |
| 58+ | 0.37 EUR |
| 117+ | 0.18 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.1 EUR |