Technische Details AS4C64M8D1-5TCN Alliance Memory
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; TSOP66 II, Clock frequency: 200MHz, Memory: 512Mb DRAM, Operating temperature: 0...70°C, Kind of package: in-tray, Memory organisation: 64Mx8bit, Kind of interface: parallel, Kind of memory: DDR1; SDRAM, Type of integrated circuit: DRAM memory, Operating voltage: 2.5V, Mounting: SMD, Case: TSOP66 II, Anzahl je Verpackung: 108 Stücke.
Weitere Produktangebote AS4C64M8D1-5TCN
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| AS4C64M8D1-5TCN | Hersteller : ALLIANCE MEMORY |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; TSOP66 II Clock frequency: 200MHz Memory: 512Mb DRAM Operating temperature: 0...70°C Kind of package: in-tray Memory organisation: 64Mx8bit Kind of interface: parallel Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory Operating voltage: 2.5V Mounting: SMD Case: TSOP66 II Anzahl je Verpackung: 108 Stücke |
Produkt ist nicht verfügbar |
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AS4C64M8D1-5TCN | Hersteller : Alliance Memory, Inc. |
Description: IC DRAM 512MBIT PAR 66TSOP II |
Produkt ist nicht verfügbar |
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| AS4C64M8D1-5TCN | Hersteller : ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; TSOP66 II Clock frequency: 200MHz Memory: 512Mb DRAM Operating temperature: 0...70°C Kind of package: in-tray Memory organisation: 64Mx8bit Kind of interface: parallel Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory Operating voltage: 2.5V Mounting: SMD Case: TSOP66 II |
Produkt ist nicht verfügbar |