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AS4C8M16MSB-6BINTR

AS4C8M16MSB-6BINTR Alliance Memory, Inc.


AllianceMemory_AS4C8M16MSB-6BIN_128Mb_LPSDR_1.8V_rev1.0_230307_CV.PDF Hersteller: Alliance Memory, Inc.
Description: IC DRAM 128MBIT LVCMOS 54FBGA
Packaging: Tape & Reel (TR)
Package / Case: 54-TFBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPSDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 54-FBGA (8x8)
Write Cycle Time - Word, Page: 15ns
Memory Interface: LVCMOS
Access Time: 5.5 ns
Memory Organization: 8M x 16
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Technische Details AS4C8M16MSB-6BINTR Alliance Memory, Inc.

Description: IC DRAM 128MBIT LVCMOS 54FBGA, Packaging: Tape & Reel (TR), Package / Case: 54-TFBGA, Mounting Type: Surface Mount, Memory Size: 128Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.7V ~ 1.95V, Technology: SDRAM - Mobile LPSDR, Clock Frequency: 166 MHz, Memory Format: DRAM, Supplier Device Package: 54-FBGA (8x8), Write Cycle Time - Word, Page: 15ns, Memory Interface: LVCMOS, Access Time: 5.5 ns, Memory Organization: 8M x 16.

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AS4C8M16MSB-6BINTR AS4C8M16MSB-6BINTR Hersteller : Alliance Memory AllianceMemory_AS4C8M16MSB_6BIN_128Mb_LPSDR_1_8V_r-3483246.pdf DRAM LPSDRAM, 128M 8M X 16, 1.8V, 54 BALL, BGA, 8X16MM, 166MHZ INDUSTRIAL TEMP, T&R, B Die
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