AS4PKHM3/86A Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2.4A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 962 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details AS4PKHM3/86A Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2.4A TO277A, Current - Reverse Leakage @ Vr: 10 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 962 mV @ 2 A, Voltage - DC Reverse (Vr) (Max): 800 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-277A (SMPC), Current - Average Rectified (Io): 2.4A, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Technology: Avalanche, Reverse Recovery Time (trr): 1.8 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-277, 3-PowerDFN, Packaging: Tape & Reel (TR).