AS6C1008-55BINTR ALLIANCE MEMORY
Hersteller: ALLIANCE MEMORYCategory: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.7÷5.5V; 55ns; TFBGA36
Mounting: SMD
Case: TFBGA36
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Integrated circuit features: LPC
Kind of package: reel; tape
Kind of interface: parallel
Memory: 1Mb SRAM
Operating voltage: 2.7...5.5V
Anzahl je Verpackung: 2000 Stücke
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Technische Details AS6C1008-55BINTR ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ., Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.7÷5.5V; 55ns; TFBGA36, Mounting: SMD, Case: TFBGA36, Operating temperature: -40...85°C, Type of integrated circuit: SRAM memory, Kind of memory: asynchronous; SRAM, Memory organisation: 128kx8bit, Access time: 55ns, Integrated circuit features: LPC, Kind of package: reel; tape, Kind of interface: parallel, Memory: 1Mb SRAM, Operating voltage: 2.7...5.5V, Anzahl je Verpackung: 2000 Stücke.
Weitere Produktangebote AS6C1008-55BINTR
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AS6C1008-55BINTR | Hersteller : Alliance Memory, Inc. |
Description: IC SRAM 1MBIT PARALLEL 36TFBGA Packaging: Tape & Reel (TR) Package / Case: 36-TFBGA Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 36-TFBGA (6x8) Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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AS6C1008-55BINTR | Hersteller : Alliance Memory |
SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM |
Produkt ist nicht verfügbar |
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| AS6C1008-55BINTR | Hersteller : ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.7÷5.5V; 55ns; TFBGA36 Mounting: SMD Case: TFBGA36 Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory organisation: 128kx8bit Access time: 55ns Integrated circuit features: LPC Kind of package: reel; tape Kind of interface: parallel Memory: 1Mb SRAM Operating voltage: 2.7...5.5V |
Produkt ist nicht verfügbar |