Produkte > ALLIANCE MEMORY > AS6C1008-55BINTR

AS6C1008-55BINTR ALLIANCE MEMORY


pVersion=0046&contRep=ZT&docId=E1CFE369C97725F1A704005056AB0C4F&compId=AS6C1008.pdf?ci_sign=47ff2bbc9204e727e2ceab4cf1f857cfcacd2b0e pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBCD3BDE311A0E0DC&compId=Alliance_Selection_Guide%20_Print2025.pdf?ci_sign=34f5d2d34cac1150f1f21237b486cf42d4e4f4fb Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.7÷5.5V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.7...5.5V
Access time: 55ns
Case: TFBGA36
Mounting: SMD
Integrated circuit features: LPC
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...85°C
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details AS6C1008-55BINTR ALLIANCE MEMORY

Category: Parallel SRAM memories - integ. circ., Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.7÷5.5V; 55ns; TFBGA36, Type of integrated circuit: SRAM memory, Kind of memory: asynchronous; SRAM, Memory: 1Mb SRAM, Memory organisation: 128kx8bit, Operating voltage: 2.7...5.5V, Access time: 55ns, Case: TFBGA36, Mounting: SMD, Integrated circuit features: LPC, Kind of package: reel; tape, Kind of interface: parallel, Operating temperature: -40...85°C, Anzahl je Verpackung: 2000 Stücke.

Weitere Produktangebote AS6C1008-55BINTR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AS6C1008-55BINTR AS6C1008-55BINTR Hersteller : Alliance Memory, Inc. AS6C1008feb2007.pdf Description: IC SRAM 1MBIT PARALLEL 36TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 36-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-TFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AS6C1008-55BINTR AS6C1008-55BINTR Hersteller : Alliance Memory AS6C1008_Mar_2023V1_2-3386077.pdf SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AS6C1008-55BINTR Hersteller : ALLIANCE MEMORY pVersion=0046&contRep=ZT&docId=E1CFE369C97725F1A704005056AB0C4F&compId=AS6C1008.pdf?ci_sign=47ff2bbc9204e727e2ceab4cf1f857cfcacd2b0e pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBCD3BDE311A0E0DC&compId=Alliance_Selection_Guide%20_Print2025.pdf?ci_sign=34f5d2d34cac1150f1f21237b486cf42d4e4f4fb Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.7÷5.5V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.7...5.5V
Access time: 55ns
Case: TFBGA36
Mounting: SMD
Integrated circuit features: LPC
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH