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AS6C1016-55BINTR ALLIANCE MEMORY


pVersion=0046&contRep=ZT&docId=E1CFE3C5C65527F1A704005056AB0C4F&compId=AS6C1016.PDF?ci_sign=33786359797dfeb5ad48fdb799facb0464c339a5 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBCD3BDE311A0E0DC&compId=Alliance_Selection_Guide%20_Print2025.pdf?ci_sign=34f5d2d34cac1150f1f21237b486cf42d4e4f4fb Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 2.7...5.5V
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating temperature: -40...85°C
Kind of package: reel; tape
Anzahl je Verpackung: 2000 Stücke
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Technische Details AS6C1016-55BINTR ALLIANCE MEMORY

Category: Parallel SRAM memories - integ. circ., Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TFBGA48, Type of integrated circuit: SRAM memory, Kind of memory: asynchronous; SRAM, Memory: 1Mb SRAM, Memory organisation: 64kx16bit, Operating voltage: 2.7...5.5V, Access time: 55ns, Case: TFBGA48, Kind of interface: parallel, Mounting: SMD, Integrated circuit features: LPC, Operating temperature: -40...85°C, Kind of package: reel; tape, Anzahl je Verpackung: 2000 Stücke.

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AS6C1016-55BINTR AS6C1016-55BINTR Hersteller : Alliance Memory, Inc. AS6C1016.pdf Description: IC SRAM 1MBIT PARALLEL 48TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
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AS6C1016-55BINTR AS6C1016-55BINTR Hersteller : Alliance Memory AS6C1016_rev_1_5_September_2015-1288465.pdf SRAM 1Mb, 2.7V-5.5V, 55ns 64K x 16
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AS6C1016-55BINTR Hersteller : ALLIANCE MEMORY pVersion=0046&contRep=ZT&docId=E1CFE3C5C65527F1A704005056AB0C4F&compId=AS6C1016.PDF?ci_sign=33786359797dfeb5ad48fdb799facb0464c339a5 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBCD3BDE311A0E0DC&compId=Alliance_Selection_Guide%20_Print2025.pdf?ci_sign=34f5d2d34cac1150f1f21237b486cf42d4e4f4fb Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 2.7...5.5V
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH