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AS6C1616B-55BINTR ALLIANCE MEMORY


pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBCD3BDE311A0E0DC&compId=Alliance_Selection_Guide%20_Print2025.pdf?ci_sign=34f5d2d34cac1150f1f21237b486cf42d4e4f4fb Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Integrated circuit features: LPC
Case: TFBGA48
Operating temperature: -40...85°C
Memory: 16Mb SRAM
Operating voltage: 2.7...3.6V
Anzahl je Verpackung: 1000 Stücke
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Technische Details AS6C1616B-55BINTR ALLIANCE MEMORY

Category: Parallel SRAM memories - integ. circ., Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48, Mounting: SMD, Type of integrated circuit: SRAM memory, Kind of memory: asynchronous; SRAM, Memory organisation: 1Mx16bit, Access time: 55ns, Integrated circuit features: LPC, Case: TFBGA48, Operating temperature: -40...85°C, Memory: 16Mb SRAM, Operating voltage: 2.7...3.6V, Anzahl je Verpackung: 1000 Stücke.

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AS6C1616B-55BINTR AS6C1616B-55BINTR Hersteller : Alliance Memory AllianceMemory_16M_LPSRAM_AS6C1616B_Nov2020_Rev1_0-1928318.pdf SRAM 16Mb, LP SRAM, 1024K x 16, 2.7 - 3.6V, 48ball 6mmx8mm FBGA, 55ns, Industrial Temp, B Die, T&R
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AS6C1616B-55BINTR Hersteller : ALLIANCE MEMORY pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBCD3BDE311A0E0DC&compId=Alliance_Selection_Guide%20_Print2025.pdf?ci_sign=34f5d2d34cac1150f1f21237b486cf42d4e4f4fb Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Integrated circuit features: LPC
Case: TFBGA48
Operating temperature: -40...85°C
Memory: 16Mb SRAM
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH