AS6C1616B-55BINTR ALLIANCE MEMORY
Hersteller: ALLIANCE MEMORYCategory: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.7...3.6V
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Integrated circuit features: LPC
Anzahl je Verpackung: 1000 Stücke
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Technische Details AS6C1616B-55BINTR ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ., Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48, Type of integrated circuit: SRAM memory, Kind of memory: asynchronous; SRAM, Memory: 16Mb SRAM, Memory organisation: 1Mx16bit, Operating voltage: 2.7...3.6V, Access time: 55ns, Case: TFBGA48, Mounting: SMD, Operating temperature: -40...85°C, Integrated circuit features: LPC, Anzahl je Verpackung: 1000 Stücke.
Weitere Produktangebote AS6C1616B-55BINTR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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AS6C1616B-55BINTR | Hersteller : Alliance Memory |
SRAM 16Mb, LP SRAM, 1024K x 16, 2.7 - 3.6V, 48ball 6mmx8mm FBGA, 55ns, Industrial Temp, B Die, T&R |
Produkt ist nicht verfügbar |
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| AS6C1616B-55BINTR | Hersteller : ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 2.7...3.6V Access time: 55ns Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Integrated circuit features: LPC |
Produkt ist nicht verfügbar |