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AS6C8016B-55ZIN

AS6C8016B-55ZIN Alliance Memory

AllianceMemory_8M_AS6C8016B_xxZIN_November2020_Rev-1990008.pdf Hersteller: Alliance Memory
SRAM LP SRAM, 512K x 16, 2.7 - 3.6V, 44pin TSOP II, 55ns, Industrial Temp
auf Bestellung 111 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+11.11 EUR
10+ 9.87 EUR
100+ 8.85 EUR
270+ 8.75 EUR
540+ 7.9 EUR
1080+ 7.87 EUR
2565+ 7.74 EUR
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Technische Details AS6C8016B-55ZIN Alliance Memory

Description: IC SRAM 8MBIT PARALLEL 44TSOP II, Packaging: Tray, Package / Case: 44-TSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 8Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 44-TSOP II, Part Status: Active, Write Cycle Time - Word, Page: 55ns, Memory Interface: Parallel, Access Time: 55 ns, Memory Organization: 512K x 16, DigiKey Programmable: Not Verified.

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AS6C8016B-55ZIN Hersteller : Alliance Memory, Inc. AllianceMemory_8M_AS6C8016B-xxZIN_November2020_Rev1.0.pdf Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
auf Bestellung 111 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.91 EUR
10+ 9.96 EUR
25+ 9.77 EUR
40+ 9.7 EUR
Mindestbestellmenge: 2
AS6C8016B-55ZIN Hersteller : ALLIANCE MEMORY 4C128M16D2-25BCNTR-DTE.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AS6C8016B-55ZIN Hersteller : ALLIANCE MEMORY 4C128M16D2-25BCNTR-DTE.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kx16bit; 3V; 55ns; TSOP44 II; 400mils; 8MbSRAM
Mounting: SMD
Operating voltage: 3V
Access time: 55ns
IC width: 400mils
Type of integrated circuit: SRAM memory
Integrated circuit features: LPC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Case: TSOP44 II
Kind of memory: asynchronous; SRAM
Produkt ist nicht verfügbar