Technische Details ATP102-TL-H ON Semiconductor
Description: MOSFET P-CH 30V 40A ATPAK, Packaging: Tape & Reel (TR), Package / Case: ATPAK (2 leads+tab), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V, Power Dissipation (Max): 40W (Tc), Supplier Device Package: ATPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 10 V.
Weitere Produktangebote ATP102-TL-H
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
ATP102-TL-H | Hersteller : ON Semiconductor |
 Trans MOSFET P-CH 30V 40A 3-Pin(2+Tab) ATPAK T/R |
Produkt ist nicht verfügbar |
|
 |
ATP102-TL-H | Hersteller : onsemi |
Description: MOSFET P-CH 30V 40A ATPAK Packaging: Tape & Reel (TR) Package / Case: ATPAK (2 leads+tab) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V Power Dissipation (Max): 40W (Tc) Supplier Device Package: ATPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 10 V |
Produkt ist nicht verfügbar |
|
|
|
ATP102-TL-H | Hersteller : onsemi |
Description: MOSFET P-CH 30V 40A ATPAK Packaging: Cut Tape (CT) Package / Case: ATPAK (2 leads+tab) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V Power Dissipation (Max): 40W (Tc) Supplier Device Package: ATPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 10 V |
Produkt ist nicht verfügbar |