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ATP207-TL-H

ATP207-TL-H onsemi


ATP207.pdf Hersteller: onsemi
Description: MOSFET N-CH 40V 65A ATPAK
Packaging: Bulk
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 33A, 10V
Power Dissipation (Max): 50W (Tc)
Supplier Device Package: ATPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2710 pF @ 20 V
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
395+1.16 EUR
Mindestbestellmenge: 395
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Technische Details ATP207-TL-H onsemi

Description: MOSFET N-CH 40V 65A ATPAK, Packaging: Tape & Reel (TR), Package / Case: ATPAK (2 leads+tab), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Ta), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 33A, 10V, Power Dissipation (Max): 50W (Tc), Supplier Device Package: ATPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2710 pF @ 20 V.

Weitere Produktangebote ATP207-TL-H

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ATP207-TL-H Hersteller : ONSEMI ONSMS35722-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - ATP207-TL-H - ATP207-TL-H, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 2476 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
ATP207-TL-H ATP207-TL-H Hersteller : onsemi ATP207.pdf Description: MOSFET N-CH 40V 65A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 33A, 10V
Power Dissipation (Max): 50W (Tc)
Supplier Device Package: ATPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2710 pF @ 20 V
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Im Einkaufswagen  Stück im Wert von  UAH