AUIRF1010EZ Infineon Technologies
Hersteller: Infineon TechnologiesTrans MOSFET N-CH Si 60V 84A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 2320 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 264+ | 2.06 EUR |
| 500+ | 1.9 EUR |
| 1000+ | 1.73 EUR |
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Technische Details AUIRF1010EZ Infineon Technologies
Description: AUTOMOTIVE HEXFET N CHANNEL, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 51A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote AUIRF1010EZ nach Preis ab 2.79 EUR bis 2.79 EUR
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AUIRF1010EZ | Hersteller : International Rectifier |
Description: AUTOMOTIVE HEXFET N CHANNEL Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 51A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 617 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRF1010EZ | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 60V 84A Automotive 3-Pin(3+Tab) TO-220AB Tube |
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