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AUIRF1018E

AUIRF1018E Infineon / IR


Infineon_IRF1018E_DataSheet_v01_01_EN-1226767.pdf Hersteller: Infineon / IR
MOSFET 60V 79A 8.4 mOhm Automotive MOSFET
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Technische Details AUIRF1018E Infineon / IR

Description: MOSFET N-CH 60V 79A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 79A (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: TO-220AB, Part Status: Not For New Designs, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V.

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AUIRF1018E AUIRF1018E Hersteller : Infineon Technologies AUIRF1018E_Web.pdf Description: MOSFET N-CH 60V 79A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
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