
AUIRF2907ZS-7P Infineon Technologies
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Technische Details AUIRF2907ZS-7P Infineon Technologies
Description: AUTOMOTIVE HEXFET N CHANNEL, Packaging: Bulk, Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 110A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK (7-Lead), Part Status: Active, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7580 pF @ 25 V.
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AUIRF2907ZS-7P | Hersteller : International Rectifier |
![]() Packaging: Bulk Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 110A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Active Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7580 pF @ 25 V |
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AUIRF2907ZS-7P | Hersteller : Infineon / IR |
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