
AUIRF4905S Infineon Technologies

Trans MOSFET P-CH Si 55V 70A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK Tube
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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19+ | 7.85 EUR |
23+ | 6.42 EUR |
50+ | 4.70 EUR |
100+ | 4.50 EUR |
200+ | 4.07 EUR |
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Technische Details AUIRF4905S Infineon Technologies
Description: MOSFET P-CH 55V 42A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Grade: Automotive, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25, Qualification: AEC-Q101.
Weitere Produktangebote AUIRF4905S nach Preis ab 5.27 EUR bis 16.41 EUR
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AUIRF4905S | Hersteller : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 Qualification: AEC-Q101 |
auf Bestellung 2842 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRF4905S | Hersteller : INFINEON |
![]() tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 70A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 170W Bauform - Transistor: TO-263AB Anzahl der Pins: 3Pins Produktpalette: HEXFET productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.02ohm SVHC: No SVHC (08-Jul-2021) |
auf Bestellung 3465 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRF4905S | Hersteller : International Rectifier |
![]() Anzahl je Verpackung: 5 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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AUIRF4905S Produktcode: 175739
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AUIRF4905S | Hersteller : Infineon Technologies |
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AUIRF4905S | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -55V; -44A; 170W; D2PAK Technology: HEXFET® Mounting: SMD Case: D2PAK Drain-source voltage: -55V Drain current: -44A On-state resistance: 20mΩ Type of transistor: P-MOSFET Power dissipation: 170W Polarisation: unipolar Kind of package: tube Gate charge: 0.12µC Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
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AUIRF4905S | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -55V; -44A; 170W; D2PAK Technology: HEXFET® Mounting: SMD Case: D2PAK Drain-source voltage: -55V Drain current: -44A On-state resistance: 20mΩ Type of transistor: P-MOSFET Power dissipation: 170W Polarisation: unipolar Kind of package: tube Gate charge: 0.12µC Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |