AUIRF7309QTR Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 3.63 EUR |
| 10+ | 3.01 EUR |
| 100+ | 2.41 EUR |
| 250+ | 2.22 EUR |
| 500+ | 2.01 EUR |
| 1000+ | 1.74 EUR |
| 2500+ | 1.64 EUR |
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Technische Details AUIRF7309QTR Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A, 3A, Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Last Time Buy.
Weitere Produktangebote AUIRF7309QTR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| AUIRF7309QTR | International Rectifier |
 MOSFET 2N-CH 50V 3A 8SOIC Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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AUIRF7309QTR | Infineon Technologies |
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Last Time Buy |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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AUIRF7309QTR | Infineon Technologies |
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Last Time Buy |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
AUIRF7309QTR | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4/-3A Power dissipation: 1.4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.05/0.1Ω Mounting: SMD Kind of channel: enhancement Gate charge: 16.7nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AUIRF7309QTR |
|
Hersteller: International Rectifier
MOSFET 2N-CH 50V 3A 8SOIC Транзистори
MOSFET 2N-CH 50V 3A 8SOIC Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AUIRF7309QTR |
|
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AUIRF7309QTR |
|
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AUIRF7309QTR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.05/0.1Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.7nC
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.05/0.1Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.7nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH