AUIRF7342QTR Infineon Technologies


auirf7342q-1225794.pdf
Hersteller: Infineon Technologies
MOSFET AUTO -55V 1 N-CH HEXFET 105mOhms
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Lieferzeit 10-14 Tag (e)
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10+3.91 EUR
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100+3.15 EUR
250+2.97 EUR
500+2.82 EUR
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Technische Details AUIRF7342QTR Infineon Technologies

Description: MOSFET 2P-CH 55V 3.4A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 55V, Current - Continuous Drain (Id) @ 25°C: 3.4A, Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V, Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Not For New Designs, Grade: Automotive, Qualification: AEC-Q101.

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AUIRF7342QTR AUIRF7342QTR Infineon Technologies INFN-S-A0002298909-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2P-CH 55V 3.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7342QTR INFN-S-A0002298909-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 55V 3.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH