AUIRF7343Q Infineon Technologies

Description: MOSFET N/P-CH 55V 4.7A 8SOIC, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube, Part Status: Obsolete, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V, Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A, Drain to Source Voltage (Vdss): 55V.