AUIRF7379QTR Infineon Technologies
auf Bestellung 4000 Stücke:
Lieferzeit 378-392 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 5.17 EUR |
| 12+ | 4.68 EUR |
| 100+ | 3.77 EUR |
| 500+ | 3.07 EUR |
| 1000+ | 2.57 EUR |
| 2000+ | 2.37 EUR |
| 4000+ | 2.29 EUR |
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Technische Details AUIRF7379QTR Infineon Technologies
Description: AUIRF7379Q - 30V-55V DUAL N AND, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A, Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V, Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote AUIRF7379QTR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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AUIRF7379QTR | Hersteller : INFINEON TECHNOLOGIES |
 Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 5.8/-4.3A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 38/70mΩ Mounting: SMD Gate charge: 16.7nC Kind of channel: enhanced Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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AUIRF7379QTR | Hersteller : International Rectifier |
Description: AUIRF7379Q - 30V-55V DUAL N AND Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
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AUIRF7379QTR | Hersteller : Infineon Technologies |
Description: AUIRF7379Q - 30V-55V DUAL N AND Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
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AUIRF7379QTR | Hersteller : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 5.8/-4.3A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 38/70mΩ Mounting: SMD Gate charge: 16.7nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |