AUIRF7379QTR

AUIRF7379QTR Infineon Technologies


auirf7379q-1730856.pdf Hersteller: Infineon Technologies
MOSFET AUTO 30V 1 N-CH HEXFET 45mOhms
auf Bestellung 4000 Stücke:

Lieferzeit 374-378 Tag (e)
Anzahl Preis
1+3.50 EUR
10+3.17 EUR
100+2.55 EUR
500+2.08 EUR
1000+1.74 EUR
2000+1.61 EUR
4000+1.55 EUR
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Technische Details AUIRF7379QTR Infineon Technologies

Description: AUIRF7379Q - 30V-55V DUAL N AND, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A, Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V, Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.

Weitere Produktangebote AUIRF7379QTR

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Preis
AUIRF7379QTR AUIRF7379QTR Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D7464F1A6F5005056AB5A8F&compId=auirf7379q.pdf?ci_sign=b23d50bc5b963af5978a81d146c110175c10ccaf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 38/70mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.7nC
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
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AUIRF7379QTR AUIRF7379QTR Hersteller : International Rectifier auirf7379q.pdf?fileId=5546d462533600a4015355ad4d7713e2 Description: AUIRF7379Q - 30V-55V DUAL N AND
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7379QTR AUIRF7379QTR Hersteller : Infineon Technologies auirf7379q.pdf?fileId=5546d462533600a4015355ad4d7713e2 Description: AUIRF7379Q - 30V-55V DUAL N AND
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7379QTR AUIRF7379QTR Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D7464F1A6F5005056AB5A8F&compId=auirf7379q.pdf?ci_sign=b23d50bc5b963af5978a81d146c110175c10ccaf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 38/70mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.7nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH