AUIRF7640S2TR

AUIRF7640S2TR Infineon Technologies


auirf7640s2.pdf?fileId=5546d462533600a4015355ad6cb513ea Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 5.8A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 13A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 25µA
Supplier Device Package: DIRECTFET SB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4800 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
4800+1.01 EUR
Mindestbestellmenge: 4800
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details AUIRF7640S2TR Infineon Technologies

Description: MOSFET N-CH 60V 5.8A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric SB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 21A (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 13A, 10V, Power Dissipation (Max): 2.4W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 5V @ 25µA, Supplier Device Package: DIRECTFET SB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

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AUIRF7640S2TR AUIRF7640S2TR Hersteller : Infineon Technologies auirf7640s2.pdf?fileId=5546d462533600a4015355ad6cb513ea Description: MOSFET N-CH 60V 5.8A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric SB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 13A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 25µA
Supplier Device Package: DIRECTFET SB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4947 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.57 EUR
10+2.29 EUR
100+1.56 EUR
500+1.24 EUR
1000+1.14 EUR
2000+1.06 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7640S2TR AUIRF7640S2TR Hersteller : INFINEON TECHNOLOGIES auirf7640s2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 30W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 4800 Stücke
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AUIRF7640S2TR AUIRF7640S2TR Hersteller : Infineon Technologies 3431596133260768auirf7640s2.pdf Trans MOSFET N-CH Si 60V 5.8A Automotive 6-Pin Direct-FET SB T/R
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AUIRF7640S2TR AUIRF7640S2TR Hersteller : Infineon Technologies auirf7640s2-1226067.pdf MOSFETs 60VAUTO GRADE 1 N-CH HEXFET 36mOhms
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AUIRF7640S2TR AUIRF7640S2TR Hersteller : INFINEON TECHNOLOGIES auirf7640s2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 30W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH