AUIRF7669L2TR Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 19A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 114A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 68A, 10V
Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 2+ | 11.21 EUR |
| 10+ | 8.83 EUR |
| 100+ | 8.16 EUR |
| 500+ | 8 EUR |
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Technische Details AUIRF7669L2TR Infineon Technologies
Description: MOSFET N-CH 100V 19A DIRECTFET, Qualification: AEC-Q101, Grade: Automotive, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 3.3W (Ta), 100W (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 68A, 10V, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 114A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric L8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: DirectFET™ Isometric L8.
Weitere Produktangebote AUIRF7669L2TR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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AUIRF7669L2TR | Infineon Technologies |
Description: MOSFET N-CH 100V 19A DIRECTFET Qualification: AEC-Q101 Grade: Automotive Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 3.3W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 68A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 114A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric L8 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DirectFET™ Isometric L8 |
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Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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AUIRF7669L2TR | Infineon Technologies |
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AUIRF7669L2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 114A; 100W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 114A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 100W Technology: HEXFET® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AUIRF7669L2TR |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 19A DIRECTFET
Qualification: AEC-Q101
Grade: Automotive
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 68A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 114A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric L8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DirectFET™ Isometric L8
Description: MOSFET N-CH 100V 19A DIRECTFET
Qualification: AEC-Q101
Grade: Automotive
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 68A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 114A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric L8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DirectFET™ Isometric L8
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
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Hersteller: Infineon Technologies
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MOSFETs 100V AUTO GRADE 1 N-CH HEXFET
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Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AUIRF7669L2TR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 114A; 100W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 114A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 100W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 114A; 100W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 114A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 100W
Technology: HEXFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH