AUIRF7669L2TR Infineon Technologies
Hersteller: Infineon TechnologiesTrans MOSFET N-CH Si 100V 19A Automotive AEC-Q101 15-Pin Direct-FET L8 T/R
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 9.35 EUR |
| 17+ | 8.44 EUR |
| 25+ | 8.08 EUR |
| 100+ | 7.21 EUR |
| 250+ | 6.87 EUR |
| 500+ | 6.48 EUR |
| 1000+ | 6.1 EUR |
| 3000+ | 6.01 EUR |
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Technische Details AUIRF7669L2TR Infineon Technologies
Description: MOSFET N-CH 100V 19A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric L8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 114A (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 68A, 10V, Power Dissipation (Max): 3.3W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: DirectFET™ Isometric L8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote AUIRF7669L2TR nach Preis ab 6.01 EUR bis 11.21 EUR
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AUIRF7669L2TR | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 100V 19A Automotive AEC-Q101 15-Pin Direct-FET L8 T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRF7669L2TR | Hersteller : Infineon Technologies |
MOSFETs 100V AUTO GRADE 1 N-CH HEXFET |
auf Bestellung 2191 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRF7669L2TR | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 19A DIRECTFET Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 114A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 68A, 10V Power Dissipation (Max): 3.3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 3964 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRF7669L2TR | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 100V 19A Automotive 15-Pin Direct-FET L8 T/R |
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AUIRF7669L2TR | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 100V 19A Automotive AEC-Q101 15-Pin Direct-FET L8 T/R |
Produkt ist nicht verfügbar |
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AUIRF7669L2TR | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 114A; 100W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 114A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 100W Technology: HEXFET® Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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AUIRF7669L2TR | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 19A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 114A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 68A, 10V Power Dissipation (Max): 3.3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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AUIRF7669L2TR | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 114A; 100W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 114A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 100W Technology: HEXFET® |
Produkt ist nicht verfügbar |