AUIRF7675M2TR Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 150V 4.4A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric M2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 11A, 10V
Power Dissipation (Max): 2.7W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DirectFET™ Isometric M2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4800+ | 2.16 EUR |
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Technische Details AUIRF7675M2TR Infineon Technologies
Description: MOSFET N-CH 150V 4.4A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric M2, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 18A (Tc), Rds On (Max) @ Id, Vgs: 56mOhm @ 11A, 10V, Power Dissipation (Max): 2.7W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: DirectFET™ Isometric M2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote AUIRF7675M2TR nach Preis ab 2.25 EUR bis 4.45 EUR
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AUIRF7675M2TR | Hersteller : International Rectifier |
Description: AUIRF7675M2 - 120V-300V N-CHANNE Packaging: Bulk Package / Case: DirectFET™ Isometric M2 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 11A, 10V Power Dissipation (Max): 2.7W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DirectFET™ Isometric M2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2988 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRF7675M2TR | Hersteller : Infineon Technologies |
MOSFETs 150V AUTO GRD 1 N-CH HEXFET DIRECTFET M2 |
auf Bestellung 4538 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRF7675M2TR | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 150V 4.4A DIRECTFET Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric M2 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 11A, 10V Power Dissipation (Max): 2.7W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DirectFET™ Isometric M2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 9508 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRF7675M2TR | Hersteller : INFINEON |
Description: INFINEON - AUIRF7675M2TR - Leistungs-MOSFET, n-Kanal, 150 V, 18 A, 0.047 ohm, DirectFET M2, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 18A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 45W Bauform - Transistor: DirectFET M2 Anzahl der Pins: 7Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.047ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 4253 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRF7675M2TR | Hersteller : INFINEON |
Description: INFINEON - AUIRF7675M2TR - Leistungs-MOSFET, n-Kanal, 150 V, 18 A, 0.047 ohm, DirectFET M2, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 18A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 45W Bauform - Transistor: DirectFET M2 Anzahl der Pins: 7Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.047ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 4253 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRF7675M2TR | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 150V 4.4A Automotive 7-Pin Direct-FET M2 T/R |
Produkt ist nicht verfügbar |