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AUIRF7737L2TR

AUIRF7737L2TR Infineon Technologies

auirf7737l2.pdf?fileId=5546d462533600a4015355b095ab1403 Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 31A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 94A, 10V
Power Dissipation (Max): 3.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: DIRECTFET L6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5469 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+4.16 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details AUIRF7737L2TR Infineon Technologies

Description: MOSFET N-CH 40V 31A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric L6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 156A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 94A, 10V, Power Dissipation (Max): 3.3W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: DIRECTFET L6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5469 pF @ 25 V.

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AUIRF7737L2TR AUIRF7737L2TR Hersteller : Infineon Technologies auirf7737l2.pdf?fileId=5546d462533600a4015355b095ab1403 Description: MOSFET N-CH 40V 31A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 94A, 10V
Power Dissipation (Max): 3.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: DIRECTFET L6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5469 pF @ 25 V
auf Bestellung 7387 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.54 EUR
10+7.17 EUR
100+5.80 EUR
500+5.15 EUR
1000+4.41 EUR
2000+4.16 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7737L2TR Hersteller : ROCHESTER ELECTRONICS auirf7737l2.pdf?fileId=5546d462533600a4015355b095ab1403 Description: ROCHESTER ELECTRONICS - AUIRF7737L2TR - AUIRF7737L2 20V-40V N-CHANNEL AUTOMOTIVE
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 7216 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7737L2TR Hersteller : INFINEON TECHNOLOGIES auirf7737l2.pdf?fileId=5546d462533600a4015355b095ab1403 AUIRF7737L2TR SMD N channel transistors
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AUIRF7737L2TR AUIRF7737L2TR Hersteller : Infineon Technologies auirf7737l2-1730825.pdf MOSFET 40V AUTOGRADE 1 N-CH HEXFET 7.9mOhms
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