AUIRF7737L2TR Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 31A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 94A, 10V
Power Dissipation (Max): 3.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: DIRECTFET L6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5469 pF @ 25 V
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Technische Details AUIRF7737L2TR Infineon Technologies
Description: MOSFET N-CH 40V 31A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric L6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 156A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 94A, 10V, Power Dissipation (Max): 3.3W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: DIRECTFET L6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5469 pF @ 25 V.
Weitere Produktangebote AUIRF7737L2TR nach Preis ab 4.16 EUR bis 8.54 EUR
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AUIRF7737L2TR | Infineon Technologies |
Description: MOSFET N-CH 40V 31A DIRECTFET Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric L6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 156A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 94A, 10V Power Dissipation (Max): 3.3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: DIRECTFET L6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5469 pF @ 25 V |
auf Bestellung 7387 Stücke: Lieferzeit 10-14 Tag (e) |
|
| AUIRF7737L2TR |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 31A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 94A, 10V
Power Dissipation (Max): 3.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: DIRECTFET L6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5469 pF @ 25 V
Description: MOSFET N-CH 40V 31A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 94A, 10V
Power Dissipation (Max): 3.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: DIRECTFET L6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5469 pF @ 25 V
auf Bestellung 7387 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.54 EUR |
| 10+ | 7.17 EUR |
| 100+ | 5.8 EUR |
| 500+ | 5.15 EUR |
| 1000+ | 4.41 EUR |
| 2000+ | 4.16 EUR |