AUIRF8739L2TR Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 40V 57A DIRECTFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 545A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 195A, 10V
Power Dissipation (Max): 3.8W (Ta), 340W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 40V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 562 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17890 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 12443 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 68+ | 7.51 EUR |
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Technische Details AUIRF8739L2TR Infineon Technologies
Description: MOSFET N-CH 40V 57A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric L8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 545A (Tc), Rds On (Max) @ Id, Vgs: 0.6mOhm @ 195A, 10V, Power Dissipation (Max): 3.8W (Ta), 340W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 250µA, Supplier Device Package: DirectFET™ Isometric L8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): 40V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 562 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 17890 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote AUIRF8739L2TR nach Preis ab 5.05 EUR bis 12.24 EUR
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AUIRF8739L2TR | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 40V 57A Automotive AEC-Q101 9-Pin Direct-FET T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRF8739L2TR | Hersteller : INFINEON |
Description: INFINEON - AUIRF8739L2TR - Leistungs-MOSFET, n-Kanal, 40 V, 375 A, 350 µohm, DirectFET L8, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 375A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.9V euEccn: NLR Verlustleistung: 340W Bauform - Transistor: DirectFET L8 Anzahl der Pins: 8Pin(s) Produktpalette: DirectFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 350µohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 4792 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRF8739L2TR | Hersteller : INFINEON |
Description: INFINEON - AUIRF8739L2TR - Leistungs-MOSFET, n-Kanal, 40 V, 375 A, 350 µohm, DirectFET L8, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 375A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.9V euEccn: NLR Verlustleistung: 340W Bauform - Transistor: DirectFET L8 Anzahl der Pins: 8Pin(s) Produktpalette: DirectFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 350µohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 4792 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRF8739L2TR | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 57A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 545A (Tc) Rds On (Max) @ Id, Vgs: 0.6mOhm @ 195A, 10V Power Dissipation (Max): 3.8W (Ta), 340W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 40V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 562 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17890 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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AUIRF8739L2TR | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 57A DIRECTFET Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 545A (Tc) Rds On (Max) @ Id, Vgs: 0.6mOhm @ 195A, 10V Power Dissipation (Max): 3.8W (Ta), 340W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 40V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 562 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17890 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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AUIRF8739L2TR | Hersteller : Infineon Technologies |
MOSFETs MOSFET_(20V 40V) |
Produkt ist nicht verfügbar |