AUIRF9Z34N

AUIRF9Z34N Infineon Technologies


auirf9z34n.pdf Hersteller: Infineon Technologies
Trans MOSFET P-CH Si 55V 19A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 371 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
150+1.04 EUR
Mindestbestellmenge: 150
Produktrezensionen
Produktbewertung abgeben

Technische Details AUIRF9Z34N Infineon Technologies

Description: AUTOMOTIVE HEXFET P CHANNEL, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote AUIRF9Z34N nach Preis ab 1.04 EUR bis 2.85 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
AUIRF9Z34N AUIRF9Z34N Hersteller : Infineon Technologies auirf9z34n.pdf Trans MOSFET P-CH Si 55V 19A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 371 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
150+1.04 EUR
Mindestbestellmenge: 150
AUIRF9Z34N AUIRF9Z34N Hersteller : International Rectifier IRSDS11744-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE HEXFET P CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 12326 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
388+1.25 EUR
Mindestbestellmenge: 388
AUIRF9Z34N Hersteller : International Rectifier IRSDS11744-1.pdf?t.download=true&u=5oefqw AUIRF9Z34N.pdf MOSFET P-CH 55V 19A Automotive AUIRF9Z34N International Rectifier TAUIRF9Z34n
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+2.85 EUR
Mindestbestellmenge: 20
AUIRF9Z34N AUIRF9Z34N Hersteller : Infineon Technologies auirf9z34n.pdf Trans MOSFET P-CH Si 55V 19A Automotive 3-Pin(3+Tab) TO-220AB Tube
Produkt ist nicht verfügbar
AUIRF9Z34N AUIRF9Z34N Hersteller : Infineon Technologies AUIRF9Z34N.pdf Description: MOSFET P-CH 55V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar