
AUIRFB8405 Infineon Technologies

Trans MOSFET N-CH Si 40V 185A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 390 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
23+ | 6.3 EUR |
26+ | 5.36 EUR |
50+ | 4.57 EUR |
100+ | 3.98 EUR |
200+ | 3.79 EUR |
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Technische Details AUIRFB8405 Infineon Technologies
Description: MOSFET N-CH 40V 120A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V, Power Dissipation (Max): 163W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 100µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5193 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote AUIRFB8405 nach Preis ab 4.3 EUR bis 10.21 EUR
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AUIRFB8405 | Hersteller : Infineon Technologies |
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auf Bestellung 1366 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRFB8405 | Hersteller : Infineon Technologies |
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auf Bestellung 138 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRFB8405 | Hersteller : Infineon Technologies |
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auf Bestellung 140 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRFB8405 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 163W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: THT Gate charge: 107nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7 Stücke: Lieferzeit 7-14 Tag (e) |
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AUIRFB8405 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 163W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: THT Gate charge: 107nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRFB8405 | Hersteller : Infineon Technologies |
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auf Bestellung 140 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRFB8405 | Hersteller : ROCHESTER ELECTRONICS |
![]() tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRFB8405 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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AUIRFB8405 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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AUIRFB8405 | Hersteller : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V Power Dissipation (Max): 163W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5193 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |