AUIRFB8407 Infineon Technologies
auf Bestellung 728 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.17 EUR |
| 10+ | 8.89 EUR |
| 25+ | 6 EUR |
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Technische Details AUIRFB8407 Infineon Technologies
Description: MOSFET N-CH 40V 195A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote AUIRFB8407 nach Preis ab 5.9 EUR bis 9.57 EUR
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AUIRFB8407 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 40V 195A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRFB8407 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 40V 250A Automotive 3-Pin(3+Tab) TO-220AB Tube |
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AUIRFB8407 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO220AB Drain-source voltage: 40V Drain current: 180A On-state resistance: 1.4mΩ Type of transistor: N-MOSFET Power dissipation: 230W Polarisation: unipolar Kind of package: tube Gate charge: 150nC Technology: HEXFET® Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220AB Anzahl je Verpackung: 1 Stücke |
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AUIRFB8407 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO220AB Drain-source voltage: 40V Drain current: 180A On-state resistance: 1.4mΩ Type of transistor: N-MOSFET Power dissipation: 230W Polarisation: unipolar Kind of package: tube Gate charge: 150nC Technology: HEXFET® Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220AB |
Produkt ist nicht verfügbar |