AUIRFN8459TR Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 4 EUR |
| 10+ | 3.1 EUR |
| 25+ | 3.06 EUR |
| 100+ | 2.55 EUR |
| 500+ | 2.2 EUR |
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Technische Details AUIRFN8459TR Infineon Technologies
Description: MOSFET 2N-CH 40V 50A PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 50W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 50A, Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V, Rds On (Max) @ Id, Vgs: 5.9mOhm @ 40A, 10V, Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V, Vgs(th) (Max) @ Id: 3.9V @ 50µA, Supplier Device Package: PQFN (5x6), Part Status: Active.
Weitere Produktangebote AUIRFN8459TR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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AUIRFN8459TR | Infineon Technologies |
 Description: MOSFET 2N-CH 40V 50A PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Rds On (Max) @ Id, Vgs: 5.9mOhm @ 40A, 10V Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 50µA Supplier Device Package: PQFN (5x6) Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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AUIRFN8459TR | Infineon Technologies |
Description: MOSFET 2N-CH 40V 50A PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Rds On (Max) @ Id, Vgs: 5.9mOhm @ 40A, 10V Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 50µA Supplier Device Package: PQFN (5x6) Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| AUIRFN8459TR |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 50A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Description: MOSFET 2N-CH 40V 50A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AUIRFN8459TR |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 50A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Description: MOSFET 2N-CH 40V 50A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH