AUIRFP4310Z Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 100V 128A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 77A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7120 pF @ 50 V
Qualification: AEC-Q101
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Technische Details AUIRFP4310Z Infineon Technologies
Description: MOSFET N-CH 100V 128A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 128A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 77A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: PG-TO247-3, Grade: Automotive, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7120 pF @ 50 V, Qualification: AEC-Q101.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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AUIRFP4310Z | Hersteller : Infineon Technologies |
MOSFETs N-CHANNEL 75 / 80 |
Produkt ist nicht verfügbar |
