AUIRFR1018E

AUIRFR1018E Infineon Technologies


4571059860270222auirfr1018e.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 60V 79A Automotive 3-Pin(2+Tab) DPAK Tube
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Technische Details AUIRFR1018E Infineon Technologies

Description: MOSFET N-CH 60V 56A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: TO-252AA (DPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V.

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AUIRFR1018E AUIRFR1018E Hersteller : Infineon Technologies AUIRFR1018E.pdf Description: MOSFET N-CH 60V 56A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
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AUIRFR1018E AUIRFR1018E Hersteller : Infineon Technologies auirfr1018e-1297919.pdf MOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhms
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