 
AUIRFR120Z International Rectifier
 Hersteller: International Rectifier
                                                Hersteller: International RectifierDescription: PFET, 8.7A I(D), 100V, 0.19OHM,
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4974 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis | 
|---|---|
| 474+ | 0.95 EUR | 
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Technische Details AUIRFR120Z International Rectifier
Description: PFET, 8.7A I(D), 100V, 0.19OHM,, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 5.2A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 4V @ 25µA, Supplier Device Package: DPAK, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V, Qualification: AEC-Q101. 
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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
|   | AUIRFR120Z | Hersteller : Infineon Technologies |  Description: MOSFET N-CH 100V 8.7A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 5.2A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: TO-252AA (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2625 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | AUIRFR120Z | Hersteller : Infineon Technologies |  MOSFET AUTO 100V 1 N-CH HEXFET 190mOhms | auf Bestellung 2193 Stücke:Lieferzeit 10-14 Tag (e) | |||||
| AUIRFR120Z | Hersteller : ROCHESTER ELECTRONICS |  Description: ROCHESTER ELECTRONICS - AUIRFR120Z - AUIRFR120 75V-100V N-CHANNEL AUTOMOTIVE tariffCode: 85412900 productTraceability: No rohsCompliant: NO euEccn: NLR hazardous: false rohsPhthalatesCompliant: NO usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 4974 Stücke:Lieferzeit 14-21 Tag (e) | ||||||
|   | AUIRFR120Z | Hersteller : Infineon Technologies |  Trans MOSFET N-CH Si 100V 8.7A Automotive 3-Pin(2+Tab) DPAK Tube | Produkt ist nicht verfügbar | |||||
|   | AUIRFR120Z | Hersteller : Infineon Technologies |  Description: MOSFET N-CH 100V 8.7A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 5.2A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: TO-252AA (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar |