AUIRFR8403TRL Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A DPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Power Dissipation (Max): 99W (Tc)
| Anzahl | Preis |
|---|---|
| 5+ | 3.98 EUR |
| 10+ | 2.94 EUR |
| 100+ | 2.12 EUR |
| 500+ | 1.82 EUR |
| 1000+ | 1.71 EUR |
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Technische Details AUIRFR8403TRL Infineon Technologies
Description: MOSFET N-CH 40V 100A DPAK, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-252AA (DPAK), Vgs(th) (Max) @ Id: 3.9V @ 100µA, Power Dissipation (Max): 99W (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote AUIRFR8403TRL nach Preis ab 1.53 EUR bis 4.36 EUR
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AUIRFR8403TRL | Hersteller : Infineon Technologies |
MOSFETs Auto 40V N-Ch FET 3.1mOhms 100A |
auf Bestellung 2715 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRFR8403TRL | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 100A DPAK Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252AA (DPAK) Vgs(th) (Max) @ Id: 3.9V @ 100µA Power Dissipation (Max): 99W (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
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