AUIRFSL6535 International Rectifier


INFN-S-A0002296858-1.pdf?t.download=true&u=5oefqw
Hersteller: International Rectifier
Description: MOSFET N-CH 300V 19A TO262-3-901
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-TO262-3-901
Vgs(th) (Max) @ Id: 5V @ 150µA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
auf Bestellung 520 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
170+2.66 EUR
Mindestbestellmenge: 170 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details AUIRFSL6535 International Rectifier

Description: MOSFET N-CH 300V 19A TO262-3-901, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Drain to Source Voltage (Vdss): 300 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: PG-TO262-3-901, Vgs(th) (Max) @ Id: 5V @ 150µA, Power Dissipation (Max): 210W (Tc), Rds On (Max) @ Id, Vgs: 185mOhm @ 11A, 10V, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Bulk.

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AUIRFSL6535 AUIRFSL6535 Infineon Technologies auirfs6535.pdf?fileId=5546d462533600a4015355b6f2c514d7 Description: MOSFET N-CH 300V 19A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: PG-TO262-3-901
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1012 Stücke:
Lieferzeit 10-14 Tag (e)
170+2.66 EUR
Mindestbestellmenge: 170 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFSL6535 AUIRFSL6535 Infineon / IR Infineon-AUIRFSL6535-DS-v01_01-EN-1225996.pdf MOSFET MOSFET_(120V 300V)
auf Bestellung 435 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFSL6535 auirfs6535.pdf?fileId=5546d462533600a4015355b6f2c514d7
Hersteller: Infineon Technologies
Description: MOSFET N-CH 300V 19A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: PG-TO262-3-901
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1012 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
170+2.66 EUR
Mindestbestellmenge: 170 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFSL6535 Infineon-AUIRFSL6535-DS-v01_01-EN-1225996.pdf
Hersteller: Infineon / IR
MOSFET MOSFET_(120V 300V)
auf Bestellung 435 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH