AUIRFSL8403

AUIRFSL8403 International Rectifier


IRSDS18668-1.pdf?t.download=true&u=5oefqw Hersteller: International Rectifier
Description: MOSFET N-CH 40V 123A TO262
Packaging: Bulk
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V
auf Bestellung 3030 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
307+2.32 EUR
Mindestbestellmenge: 307
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Technische Details AUIRFSL8403 International Rectifier

Description: MOSFET N-CH 40V 123A TO262, Packaging: Bulk, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 123A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V, Power Dissipation (Max): 99W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 100µA, Supplier Device Package: TO-262, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V.

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AUIRFSL8403 AUIRFSL8403 Hersteller : INFINEON TECHNOLOGIES AUIRFSL8403.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 87A; 99W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 87A
Power dissipation: 99W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 62nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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AUIRFSL8403 AUIRFSL8403 Hersteller : INFINEON TECHNOLOGIES AUIRFSL8403.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 87A; 99W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 87A
Power dissipation: 99W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 62nC
Kind of channel: enhanced
Produkt ist nicht verfügbar