AUIRL7766M2TR International Rectifier
Hersteller: International RectifierDescription: MOSFET N-CH 100V 10A DIRECTFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric M4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 31A, 10V
Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 150µA
Supplier Device Package: DirectFET™ Isometric M4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5305 pF @ 25 V
auf Bestellung 37084 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 156+ | 4.56 EUR |
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Technische Details AUIRL7766M2TR International Rectifier
Description: MOSFET N-CH 100V 10A DIRECTFET, Packaging: Bulk, Package / Case: DirectFET™ Isometric M4, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 10mOhm @ 31A, 10V, Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 150µA, Supplier Device Package: DirectFET™ Isometric M4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5305 pF @ 25 V.
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AUIRL7766M2TR | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 62.5W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 51A Power dissipation: 62.5W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
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