AUIRLS3034

AUIRLS3034 International Rectifier


IRSDS19250-1.pdf?t.download=true&u=5oefqw Hersteller: International Rectifier
Description: AUTOMOTIVE HEXFET N-CHANNEL
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V
auf Bestellung 4102 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
107+6.79 EUR
Mindestbestellmenge: 107
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Technische Details AUIRLS3034 International Rectifier

Description: AUTOMOTIVE HEXFET N-CHANNEL, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V.

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AUIRLS3034 Hersteller : INFINEON TECHNOLOGIES AUIRLS3034.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Mounting: SMD
Power dissipation: 375W
Polarisation: unipolar
Gate charge: 108nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
Drain-source voltage: 40V
Drain current: 243A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
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AUIRLS3034 AUIRLS3034 Hersteller : Infineon Technologies AUIRLS3034.pdf Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V
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AUIRLS3034 Hersteller : INFINEON TECHNOLOGIES AUIRLS3034.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Mounting: SMD
Power dissipation: 375W
Polarisation: unipolar
Gate charge: 108nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
Drain-source voltage: 40V
Drain current: 243A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
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