AUIRS20162STR Infineon Technologies
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Lieferzeit 14-21 Tag (e)
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Technische Details AUIRS20162STR Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 155°C (TJ), Voltage - Supply: 4.4V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 150 V, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 200ns, 200ns, Channel Type: Single, Driven Configuration: High-Side, Number of Drivers: 1, Gate Type: N-Channel MOSFET, Current - Peak Output (Source, Sink): 250mA, 250mA, Part Status: Obsolete, DigiKey Programmable: Not Verified.
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AUIRS20162STR | Hersteller : Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Voltage - Supply: 4.4V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 150 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 200ns, 200ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Current - Peak Output (Source, Sink): 250mA, 250mA Part Status: Obsolete DigiKey Programmable: Not Verified |
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