B1D05120E BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.78V
Case: TO252-2
Kind of package: reel; tape
Leakage current: 10µA
Max. forward impulse current: 60A
Power dissipation: 53W
Anzahl je Verpackung: 1 Stücke
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Technische Details B1D05120E BASiC SEMICONDUCTOR
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252-2; reel,tape, Type of diode: Schottky rectifying, Technology: SiC, Mounting: SMD, Max. off-state voltage: 1.2kV, Load current: 5A, Semiconductor structure: single diode, Max. forward voltage: 1.78V, Case: TO252-2, Kind of package: reel; tape, Leakage current: 10µA, Max. forward impulse current: 60A, Power dissipation: 53W, Anzahl je Verpackung: 1 Stücke.
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B1D05120E | Hersteller : BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Max. forward voltage: 1.78V Case: TO252-2 Kind of package: reel; tape Leakage current: 10µA Max. forward impulse current: 60A Power dissipation: 53W |
Produkt ist nicht verfügbar |