B1D08065K BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 56W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 35.75 EUR |
| 5+ | 14.3 EUR |
| 11+ | 6.51 EUR |
| 29+ | 2.46 EUR |
| 100+ | 1.47 EUR |
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Technische Details B1D08065K BASiC SEMICONDUCTOR
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA, Type of diode: Schottky rectifying, Technology: SiC, Mounting: THT, Max. off-state voltage: 650V, Load current: 8A, Semiconductor structure: single diode, Case: TO220-2, Max. forward voltage: 1.75V, Max. forward impulse current: 60A, Leakage current: 10µA, Kind of package: tube, Power dissipation: 56W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B1D08065K nach Preis ab 35.75 EUR bis 35.75 EUR
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B1D08065K | Hersteller : BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 56W |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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