B2D02120K1

B2D02120K1 BASiC SEMICONDUCTOR


B2D02120K1.pdf Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.9V
Max. forward impulse current: 20A
Leakage current: 20µA
Power dissipation: 35W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details B2D02120K1 BASiC SEMICONDUCTOR

Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; Ir: 20uA, Type of diode: Schottky rectifying, Technology: SiC, Mounting: THT, Max. off-state voltage: 1.2kV, Load current: 2A, Semiconductor structure: single diode, Case: TO220-2, Max. forward voltage: 1.9V, Max. forward impulse current: 20A, Leakage current: 20µA, Power dissipation: 35W, Kind of package: tube, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote B2D02120K1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
B2D02120K1 B2D02120K1 Hersteller : BASiC SEMICONDUCTOR B2D02120K1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.9V
Max. forward impulse current: 20A
Leakage current: 20µA
Power dissipation: 35W
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH