B2D08065K1 BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1V
Max. forward impulse current: 56A
Leakage current: 11µA
Kind of package: tube
Power dissipation: 64W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1V
Max. forward impulse current: 56A
Leakage current: 11µA
Kind of package: tube
Power dissipation: 64W
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 40+ | 1.82 EUR |
| 44+ | 1.63 EUR |
| 50+ | 1.44 EUR |
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Technische Details B2D08065K1 BASiC SEMICONDUCTOR
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1V, Type of diode: Schottky rectifying, Technology: SiC, Mounting: THT, Max. off-state voltage: 650V, Load current: 8A, Semiconductor structure: single diode, Case: TO220-2, Max. forward voltage: 1V, Max. forward impulse current: 56A, Leakage current: 11µA, Kind of package: tube, Power dissipation: 64W.