B2D20065HC1

B2D20065HC1 BASiC SEMICONDUCTOR


B2D20065HC1.pdf Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA
Mounting: THT
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Leakage current: 30µA
Load current: 10A x2
Power dissipation: 74W
Max. forward impulse current: 70A
Max. forward voltage: 1.75V
Max. load current: 20A
Max. off-state voltage: 650V
Kind of package: tube
Case: TO247-3
auf Bestellung 23 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.03 EUR
16+4.52 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details B2D20065HC1 BASiC SEMICONDUCTOR

Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA, Mounting: THT, Semiconductor structure: common cathode; double, Technology: SiC, Type of diode: Schottky rectifying, Leakage current: 30µA, Load current: 10A x2, Power dissipation: 74W, Max. forward impulse current: 70A, Max. forward voltage: 1.75V, Max. load current: 20A, Max. off-state voltage: 650V, Kind of package: tube, Case: TO247-3.