B2D20065HC1 BASiC SEMICONDUCTOR


B2D20065HC1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Max. load current: 20A
Max. forward impulse current: 70A
Leakage current: 30µA
Power dissipation: 74W
Kind of package: tube
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Technische Details B2D20065HC1 BASiC SEMICONDUCTOR

Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA, Type of diode: Schottky rectifying, Technology: SiC, Mounting: THT, Max. off-state voltage: 650V, Load current: 10A x2, Semiconductor structure: common cathode; double, Case: TO247-3, Max. forward voltage: 1.75V, Max. load current: 20A, Max. forward impulse current: 70A, Leakage current: 30µA, Power dissipation: 74W, Kind of package: tube.