B2D20065HC1 BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA
Mounting: THT
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Leakage current: 30µA
Load current: 10A x2
Power dissipation: 74W
Max. forward impulse current: 70A
Max. forward voltage: 1.75V
Max. load current: 20A
Max. off-state voltage: 650V
Kind of package: tube
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 5.62 EUR |
| 18+ | 4.06 EUR |
| 19+ | 3.83 EUR |
| 150+ | 3.75 EUR |
| 600+ | 3.69 EUR |
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Technische Details B2D20065HC1 BASiC SEMICONDUCTOR
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA, Mounting: THT, Semiconductor structure: common cathode; double, Technology: SiC, Type of diode: Schottky rectifying, Leakage current: 30µA, Load current: 10A x2, Power dissipation: 74W, Max. forward impulse current: 70A, Max. forward voltage: 1.75V, Max. load current: 20A, Max. off-state voltage: 650V, Kind of package: tube, Case: TO247-3, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B2D20065HC1 nach Preis ab 3.83 EUR bis 5.62 EUR
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B2D20065HC1 | Hersteller : BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA Mounting: THT Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying Leakage current: 30µA Load current: 10A x2 Power dissipation: 74W Max. forward impulse current: 70A Max. forward voltage: 1.75V Max. load current: 20A Max. off-state voltage: 650V Kind of package: tube Case: TO247-3 |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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