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B2D20120F1

B2D20120F1 BASiC SEMICONDUCTOR

B2D20120F1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 122W
Mounting: SMD
Power dissipation: 122W
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 20A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 33µA
Case: TO263-2
Type of diode: Schottky rectifying
Max. forward impulse current: 180A
Max. forward voltage: 1.8V
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Technische Details B2D20120F1 BASiC SEMICONDUCTOR

Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 122W, Mounting: SMD, Power dissipation: 122W, Technology: SiC, Max. off-state voltage: 1.2kV, Load current: 20A, Kind of package: reel; tape, Semiconductor structure: single diode, Leakage current: 33µA, Case: TO263-2, Type of diode: Schottky rectifying, Max. forward impulse current: 180A, Max. forward voltage: 1.8V.