Produkte > BASIC SEMICONDUCTOR > B2D20120F1
B2D20120F1

B2D20120F1 BASiC SEMICONDUCTOR

pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8BBA875B859580D2&compId=B2D20120F1.pdf?ci_sign=b1f92f48404f256f8dae64c0102f2808dab8d7a7 Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 122W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.8V
Max. forward impulse current: 180A
Kind of package: reel; tape
Leakage current: 33µA
Power dissipation: 122W
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Technische Details B2D20120F1 BASiC SEMICONDUCTOR

Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 122W, Type of diode: Schottky rectifying, Technology: SiC, Mounting: SMD, Max. off-state voltage: 1.2kV, Load current: 20A, Semiconductor structure: single diode, Case: TO263-2, Max. forward voltage: 1.8V, Max. forward impulse current: 180A, Kind of package: reel; tape, Leakage current: 33µA, Power dissipation: 122W.