B2D20120F1 BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 122W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.8V
Max. forward impulse current: 180A
Kind of package: reel; tape
Power dissipation: 122W
Leakage current: 33µA
Anzahl je Verpackung: 1 Stücke
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Technische Details B2D20120F1 BASiC SEMICONDUCTOR
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 122W, Type of diode: Schottky rectifying, Technology: SiC, Mounting: SMD, Max. off-state voltage: 1.2kV, Load current: 20A, Semiconductor structure: single diode, Case: TO263-2, Max. forward voltage: 1.8V, Max. forward impulse current: 180A, Kind of package: reel; tape, Power dissipation: 122W, Leakage current: 33µA, Anzahl je Verpackung: 1 Stücke.
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B2D20120F1 | Hersteller : BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 122W Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO263-2 Max. forward voltage: 1.8V Max. forward impulse current: 180A Kind of package: reel; tape Power dissipation: 122W Leakage current: 33µA |
Produkt ist nicht verfügbar |