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B2D30120H1

B2D30120H1 BASiC SEMICONDUCTOR

B2D30120H1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; Ufmax: 2V
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 225A
Case: TO247-2
Max. forward voltage: 2V
Power dissipation: 185W
Technology: SiC
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 38µA
Type of diode: Schottky rectifying
Mounting: THT
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Technische Details B2D30120H1 BASiC SEMICONDUCTOR

Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; Ufmax: 2V, Max. off-state voltage: 1.2kV, Load current: 30A, Max. forward impulse current: 225A, Case: TO247-2, Max. forward voltage: 2V, Power dissipation: 185W, Technology: SiC, Kind of package: tube, Semiconductor structure: single diode, Leakage current: 38µA, Type of diode: Schottky rectifying, Mounting: THT.