Produkte > BASIC SEMICONDUCTOR > B2D40065H1

B2D40065H1 BASiC SEMICONDUCTOR

Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 26uA
Technology: SiC
Mounting: THT
Case: TO247-2
Max. forward impulse current: 180A
Max. forward voltage: 1.76V
Power dissipation: 240W
Max. off-state voltage: 650V
Load current: 40A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 26µA
Type of diode: Schottky rectifying

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Technische Details B2D40065H1 BASiC SEMICONDUCTOR

Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 26uA, Technology: SiC, Mounting: THT, Case: TO247-2, Max. forward impulse current: 180A, Max. forward voltage: 1.76V, Power dissipation: 240W, Max. off-state voltage: 650V, Load current: 40A, Kind of package: tube, Semiconductor structure: single diode, Leakage current: 26µA, Type of diode: Schottky rectifying.