B2M040120R BASiC SEMICONDUCTOR

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 123A; 238W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 41A, Pulsed drain current: 123A, Power dissipation: 238W, Case: TO263-7, Gate-source voltage: -4...18V, On-state resistance: 40mΩ, Mounting: SMD, Gate charge: 90nC, Kind of package: reel; tape, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal.