Produkte > BASIC SEMICONDUCTOR > B3M040120H

B3M040120H BASiC SEMICONDUCTOR

Name: B3M040120H
Brand: BASiC SEMICONDUCTOR
SKU: 31820662-8
Price: 72.72 EUR
Availability: InStock

Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 124A; 312W
Case: TO247-3
Mounting: THT
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -4...18V
Kind of package: tube
On-state resistance: 40mΩ
Pulsed drain current: 124A
Power dissipation: 312W
Gate charge: 85nC
Polarisation: unipolar
Technology: SiC
Drain current: 45A
Kind of channel: enhancement

auf Bestellung 171 Stücke:

Lieferzeit 14-21 Tag (e)

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24+	3.61 EUR
27+	3.25 EUR
30+	2.88 EUR
120+	2.58 EUR

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Technische Details B3M040120H BASiC SEMICONDUCTOR

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 124A; 312W, Case: TO247-3, Mounting: THT, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Gate-source voltage: -4...18V, Kind of package: tube, On-state resistance: 40mΩ, Pulsed drain current: 124A, Power dissipation: 312W, Gate charge: 85nC, Polarisation: unipolar, Technology: SiC, Drain current: 45A, Kind of channel: enhancement.