B3M040120H BASiC SEMICONDUCTOR

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 124A; 312W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 45A, Power dissipation: 312W, Case: TO247-3, Gate-source voltage: -4...18V, On-state resistance: 40mΩ, Mounting: THT, Gate charge: 85nC, Kind of channel: enhancement, Pulsed drain current: 124A, Kind of package: tube.